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[SCI 2009] Fabrication and performance characteristics

관리자 2011.03.31
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Fabrication and performance characteristics
of a CsI(TI)/PIN diode radiation sensor for industrial applications
 
Han Soo Kim, Jang Ho Ha, Se Hwan Park,
 Seung Yeon Cho, and Yong Kyun Kim
 
  CsI(TI)/PIN diode radiation sensors were fabricated for application in various fields such as an NDT and an environmental radiation monitoring system. CsI(TI) crystals of 11x11x21㎣ were processed as optical grade from a CsI(TI) ingot and matched with PIN diodes in consideration of the light loss and the external impact. The photodiode signal is amplified by a low-noise preamplifier and a pulse shape amplifier. At room temperature, the fabricated CsI(TI)/PIN diode radiation sensors demonstrate an energy resolution of 7.9% for 660keV gamma rays and 4.9% for 1330keV. The fluctuation of the directional dependency was below 14% from 0 to 90 degree for the incident 660keV gamma rays. The copactness, the low-voltage power supply and the physical hardness are very useful features for industrial applications of the fabricated CsI(TI)/PIN diode sensor.
 
Keywords: CsI(TI), PIN diode, Photon counting, Gamma rays, NDT
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